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Hitachi Power Device Division

Hitachi

TRACTION AND INDUSTRIAL

Your European partner for high power switching . . . isn't it time you switched to Hitachi?

Hitachi IGBT series support a range of critical power control applications for high end industrial and traction applications. Hitachi's process technologies are progressive and tailored to meet the specific expectations of these markets. These include Low Injection Punch Through (LiPT) sLiPT, Trench LiPT, High Conductivity, applied (to silicon) individually or in combination to achieve the best optimised solution for a range of applications and voltages.

With a pedigree as far back as 1992 for IGBT core process design and manufacture, Hitachi's success is not only our technology but in the building of long term partnerships.

Features

  • Voltage range 1700V - 6500V
  • Current (A) range 400A - 3600A
  • Low switching losses
  • Low conduction losses
  • Soft recovery and low loss diodes
  • Low thermal expansion base plates
  • High power cycling capability
  • Positive temperature coefficient
  • Extensive package line up including
    • 130mm x 140mm
    • 190mm x 140mm
    • 30mm main terminal
    spacing options on request.

picture : Insulated Gate Bipolar Transistors

picture : Insulated Gate Bipolar Transistors

picture : Insulated Gate Bipolar Transistors

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